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| INCHANGE Semiconductor isc Product Specification MJE5180/5181/5182 isc Silicon NPN Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 *Low Saturation Voltage *Complement to Type MJE5170/5171/5172 APPLICATIONS *Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MJE5180 VCBO Collector-Base Voltage MJE5181 MJE5182 MJE5180 VCEO Collector-Emitter Voltage MJE5181 MJE5182 VEBO IC ICM IB B VALUE 120 140 160 120 140 160 5 6 10 2 65 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 Junction Temperature Storage Temperature Range V A A A PC PC TJ Tstg W 2 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.92 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification MJE5180/5181/5182 isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER MJE5180 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5181 MJE5182 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage MJE5180 ICEO Collector Cutoff Current MJE5181 MJE5182 MJE5180 ICES Collector Cutoff Current MJE5181 MJE5182 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= 6A; IB= 0.6A B CONDITIONS MIN 120 MAX UNIT IC= 30mA ;IB= 0 B 140 160 1.5 2.0 0.7 0.7 0.7 0.4 0.4 0.4 1.0 30 15 1.0 100 V V V IC= 6A; VCE= 4V VCE= 60V; IB= 0 B VCE= 70V; IB= 0 B mA VCE= 80V; IB= 0 B VCE= 120V;VEB= 0 VCE= 140V;VEB= 0 VCE= 160V;VEB= 0 VEB= 5V; IC=0 IC= 0.3A; VCE= 4V IC= 3A; VCE= 4V IC= 0.5A ;VCE= 10V;ftest= 1.0MHz mA mA MHz isc Websitewww.iscsemi.cn 2 |
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